# Testing (film characterization, and initial process dev in support of CMOS) #### Overview This page documents characterization of sputtered thin films of Al and Al2O3. This is in support of the development of a CMOS process that uses a Si-Al2O3-Al gate stack. The NMOS process originally developed with Hacker Fab tooling relies on procuring wafers that already have a Si-SiO2-PolySi prefabricated gate. This prevents the expansion of the NMOS process into a CMOS process. For a CMOS process, it is necessary for the gate stack to be fabricated in house with Hacker Fab tooling. Sputtering of the gate stack from just an Al target is pursued as a potential option to mitigate the risks associated with gate oxide contamination. For context, growing a SiO2 gate oxide has been considered, but abandoned due to a few challenges. The main being contamination control of the gate oxide in an open air tube furnace, contamination that can be introduced between oxide growth and metal deposition for the gate, and the added complexity of dopant pile up + depletion (discussed in the Oxidation Effects Section of "Microchip Fabrication: A Practical Guide to Semiconductor Processing by Peter Van Zant"). Overall this intended process simplifies the tooling required to tape out devices (cuts out evaporator and plasma etcher). Sputtering allows for a low contamination oxide to be deposited, which is immediately covered with a metal gate contact without the chip ever exiting the clean vacuum environment of the sputtering chamber. The choice of Al2O3 as the oxide and Al as the metal is motivated by simplified process flow it allows, and relatively inexpensive target material (Al2O3 is sputtered reactively form an Al target, then Al is sputtered immediately after from the same target, avoiding the need for a 2 target system or a target swapping). Al2O3 has favorable dielectric constant and band alignment, but there are risks related to charge traps forming at the Si-Al2O3 interface. Attempts are made to tune the process to mitigate this interface effect. There are two distinct sections related to the sputtered Al2O3 and Al thin film documentation. 1\) Film characterization (AFM, XPS, 4 point probe, XRR, Optical imaging) under various processing conditions. 2\) Electrical testing of devices fabricated out of the Al2O3 and Al films (MOSCaps, MOSFETs, and TLM test structures) under various processing conditions (may be moved to a dedicated CMOS processing page in the future). #### Deposition Methodology All films were deposited using RF sputtering via the Hacker Fab DIY RF sputtering chamber. More details on executing the methodology below can be found in the SOP. All depositions were done with a [99.999% pure 2" 1/8" thick Al target](https://www.lesker.com/newweb/deposition_materials/depositionmaterials_sputtertargets_1.cfm?pgid=al1) and UHP O2 and/or Ar. So, Al2O3 films are dpsosited reactively, not from an Al2O3 target. ​ 1. ​First 1cmx1cm chips are cleaved from SSP, p-Si 5-10ohm (100), 525 um thick wafers using a tungsten tip scribe. 2. ​Chips are cleaned with a variation of the RCA cleaning process (one of the tested variables). All beakers used are fused quartz to prevent contaminant leaching, all graduated cylinders are polypropylene. After cleaning, chips are blown dry with N2 then immediately loaded into the sputtering chamber. 3. ​The chamber is pumped down to 1.2E-7 hPa. 4. ​UHP Ar is flowed into the chamber as the pump speed is reduced to reach higher pressure for striking plasma. 5. ​Plasma is struck at 90 SCCM Ar (usually 1.6E-1 hPa) with 100W RF power with the shutter closed to prevent deposition on the chip. 6. ​Ar flow is reduced to 30 SCCM Ar, resulting in 1.2E-2 hPa, the system is left in this state for 15 minutes to plasma clean the target surface (the native oxide/nitride that forms on Al target and the contaminants that come with it are sputtered off and evacuated) 7. ​The plasma is turned off and the pump speed is returned to max speed, Ar flow is shut off. The system repumps down to 1.2E-7 hPa to ensure all liberated contaminants are evacuated. 8. ​Again pump speed is reduced while Ar is flowed, and plasma is struck. For Al films, Ar flow is reduced to the desired setpoint. For Al2O3 films, UHP O2 flow is added,and Ar flow is reduced to the desired setpoint. Plasma is left for 5 minutes with shutter closed to ensure SWR (rf power tuning parameter) has stabilized. 9. ​The shutter is opened, and the deposition timer begins. SWR retuning throughout deposition occurs as necessary 10. ​When the timer ends plasma is turned off, Ar and O2 flow shut off, and the pump turned off. The chamber is vented and the chip is retrieved. 11. ​For back to back Al2O3 then Al deposition. The chamber is not vented, instead the chamber is pumped down, and the target recleaned in between to ensure no introduction of contaminants. O2 annealing method: For this study, a DIY heating element was added into the chamber. More details will be found in the sputtering "Add ons and WIP" page. The O2 anneal is done in a vacuum O2 environment inside the sputtering chamber. This allows the Al2O3 to be annealed in a clean environment without any exposure to outside environment between loading the sample, and covering the al2o3 film with Al). Specifically, the chamber is pumped down, then pump speed is reduced and 50SCCM of UHP O2 is flowed in to achieve 3E-2 hPa. Then the heater is tuned on for a set period of time. The chip is allowed to cool to below 50C before either retrieving or covering with an Al film. In the following data, 12:6 15:3, 9:9, 15:0 or 30:0 indiactes the Ar:O2 flow ratio used during deposition. ## Film Characterization (Al and Al2O3) #### Thickness/Deposition Rate Measurements For thickness measurement, XRR and optical relfectometry was used. A great reference on the XRR technique is included below. XRR is very accurate thickness measurement technique that uses x-ray interence from the film surface and interface reflections to determine thickness. Similar but not equal to the principle of Bragg diffrction for powder XRD for measuring atmoic plane spacings. {% file src="" %}
Film TypeFlow Ratio (SCCM Ar : SCCM O2)Deposition TimeThickness MeasurementDeposition Rate
Al2O39:93 hours

Reflectometry

(assume n = 1.6):

47.2 nm, std = 1.8nm

(5 measurements)

.26 nm/min
Al2O39:91 hour

XRR: 15.1 nm

(single measurement)

.25 nm/min
Al15:030 minutes

XRR: 74.8

(single measurement)

2.49 nm/min
#### Sputtered Al Resisitivity To measure the Al resistivty, a 150 nm thick Al film was deposited on a glass slide, then a 4 point probe measurement was used to measure sheet resistance (removes the contribution of contact resistance), from which resistivity is calcualted (resistivity = sheet ressitance \* film thickness). It is important to use a insulating susbtrate (unlike doped Si) so that the substrate doesn't cause an artificially low sheet resistance measurment. Additionally, the glass susbtrate is sufficently wide (compared to the probe spacing) to not have to add a correction factor. 150nm was used to avoid the resistivity size effect observed in the work **"Aluminum Ultra Thin Film Grown by Physical Vapor Deposition for Solar Cell Electric Nanocontacts"** by **Abdennaceur Karoui.** {% file src="" %}

Al film resisitivity size effect observed in "Aluminum Ultra Thin Film Grown by Physical Vapor Deposition for Solar Cell Electric Nanocontacts" by Abdennaceur Karoui.

Each data point below is an average of 5 measurments in the smae spot. Raw data attached below. {% file src="" %}
| Sample | Sheet resistacne at 150nm | Resistivity at 150nm | | ------------------------------------------------- | ------------------------- | -------------------- | | 150nm thick Al sputtered at 4E-3 hPa (15 sccm Ar) | .229 ohm/sqaure | 3.44E-8 ohm.m | #### Al and Al2O3 Surface Topology
FilmFlow Ratio (SCCM Ar : SCCM O2)Deposition pressure (hPa) (turbo pump speed kept at 250Hz)Deposition Time (minutes)RMS Surface Roughness (nm)AFM ImageAHM Topology Histogram
Al2O325:51.2x10-260 0.139
Al2O315:35.4x10-3605.74
Al2O312:66.3x10-3602.782
Al2O39:96.3x10-3602.044
Al30:01.2x10-23019.833
Al15:04x10-33013.099
Al2O39:9, with post deposition O2 anneal.6.3E-380.768
#### Al2O3 XPS Data Al2O3 films, 60 minute deposition time, 250Hz pump speed. XPS is used to understand oxidation states and composition. her only oxdidation states are analyzed from Al2p peak position. Since Al2O3 is insualting, charging occurs during XPS and chifts the measured peaks. So, this is corrected for by looking at the C-C peak position (always present on the surface of a sample exposed to air), determing how far it is from the tabulated reference, then shifting all measured peaks by that amount (in eV). Tabulated XPS peak positions by element can be found from [ThermoFisher here](https://www.thermofisher.com/us/en/home/materials-science/learning-center/periodic-table.html). Below is the raw data collected for XPS, and a vibe coded python notebook used for analysis and plotting. {% file src="" %} {% file src="" %}
| Flow Ratio (SCCM Ar : SCCM O2) | Al2p Peak Position | O1s Peak Position | | ------------------------------ | ------------------ | ----------------- | | 15:3 | 74.1 eV | 531.3 eV | | 12:6 | 74.2 eV | 531.1 eV | | 9:9 | 74.2 eV | 531.1 eV | ThermoFisher reports the Al2p binding energy for alumium oxide to be 74.6 eV, and the O1s binding energy for aluminum oxide to be 531.1. 15:3 deviates the most from the reference. Peak fitting still needs to be done to detmerine composition. #### Uniformity (unassessed) All tests have been done on 1cmx1cm chips, so uniformity has not been assessed. It is of interest to process many chips at once, which may span the area of a standard 4" wafer, so uniformity will eventually be assessed quantitatively. Qualityatviy;, it seems that there is a <2" diameter area that appears to have a similar deposition rate. Below is an image of Al2O3 sputtered about \~50nm thick (which is just as Al2O3 begins to be visible to the eye on a wafer) with a relatively short 3" throw distance on a 4" diameter wafer. There is an obvious decrease in film thickness begging about 1" from the center of the wafer.
The diameter of the dark space shield is only 1.25", which is significantly smaller than the target diameter. A wider and beveled dark space shield would certainly increase uniformity, and will be considered in the future. People replicating the chamber should also consider improving the design of the dark space shield. #### Blister Defects In the reactively sputtered Al2O3 films, a bubble-like defect was observed. After some research, it was determined that these types of thin film defects are called "blisters" and are essentially a bubble in the film, caused by some type of trapped gas. Summary of blister defect observations (RCA clean with middle step HF dip) * Only occured in Al2O3 films * High variability in blister size (\~1-100 um in diameter) and density vhip to chip and spatially on single chips * Almost always circular, sometimes ovular. * Thicker films had higher blister density (some observed in 15nm films, many observed in 45nm films.

Blisters observed in 45nm thick reactively sputtered Al2O3 (9:9 flow ratio)

I could not find any literature directly discussing blisters in sputtered Al2O3, however, I found some papers on trapped Ar in specific types of sputtered metal films. The images of blisters in these papers did not have similar morphology to the ones we observed, and this mechanism didn't seem to make sense given our low sputtering rates. There is a small body of literature documenting blister defects in ALD deposited thin films, which look identical to the blisters we observed. A zip file of the relevant literature collected is found below. {% file src="" %} Below is an image from the work **"Analysis of blister formation in spatial ALD** ![](data:image/gif;base64,R0lGODlhAQABAIAAAP///wAAACH5BAEAAAAALAAAAAABAAEAAAICRAEAOw==) **for silicon surface passivation in photovoltaics"** by **L. Hennen** of blisters in ALD depsoited Al2O3.

Image from the work "Analysis of blister formation in spatial ALD for silicon surface passivation in photovoltaics" by L. Hennen of blisters in ALD depsoited Al2O3.

The blisters in ALD films are said to come from trapped species, mainly H and/or H2O which can diffuse and agglomerate at the Al2O3-Si interface. The H source is cited as being the metal organic precursors used in the ALD process. However, in sputtering there is no obvious source of H, other than what may be on the surface of the Si before any film is deposited. Based on this, it was suspected that the blister formation was surface preparation dependent. When considering surface preparation modifications to solve the blisters, the RCA clean that was being done could not be removed as it is vital for metal ion removal which is vital for gate performance. So, attempts were made to dehydrate the chip before deposition, and heat the chip during deposition. both of which failed. What ended up working, is incorporating an HF dip at the end of the RCA clean (often called HF last RCA clean and is common practice prior to to a gate oxide deposition or growth). In theory, the HF last dip etches native SiO2 and H passivates the bare Si surface making it hydrophobic, lowering the amount of H2O or organic contaminants that could cling to the surface between the cleaning and loading into the sputtering chamber. Without the HF last step, the Si should have a thin native oxide that is OH passivated, and hydrophilic. This is confirmed by observations of the chip surface with RCA vs RCA HF last cleaning: During normal RCA cleaning, the chip stays wet with the Final DI water rinse, where as with HF last RCA cleaning, the chip behaves very hydrophobic, and appears dry even after a DI water rinse. Initially the HF last cleaning was purposefully avoided to retain an thin SiO2 layer between the Si and Al2O3 to reduce the number of dangling bonds which usually occur at a pristine Si-Al2O3 interface at the cost of a higher EOT in MOSCaps and MOSFETs. However, based on the blister defect issue, an HF last clean had to be used. Note that all the AFM images included above are done on chips that had a standard RCA clean, with the exception of the O2 annealed sample. It is unclear how much this may affect surface roughness, but needs to be noted as an uncontrolled variable in the surface roughness comparison between annealed and non annealed Al2O3. | Attempt to prevent blisters | Result | | ------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------- | ---------------------------------------------------------------------------------------------------- | | 200C vaccuum bake (50sccm Ar \~3E-2 hPa) in sputtering chamber prior to deposition (to dehydrate) | High blister density | | 200C substrate heating during deposition (to facilitate volatite diffusion away from film - Si interface, may have had opposite effect). | High blister density | | Alternate substrate type - used a wafer with 500nm polySi deposited on it (has rougher surface than regualr Si wafers, literature shows limited/no blister formation with rougher surfaces) | No blisters observed | | HF dip post RCA clean (remove native oxide and create temporary hydrophobic H passivated surface) | Almost no blisters observed (some near edges where tweezer was used to handle, otherwise very clear) | As seen above, it was also observed that no blisteres formed in films deposited on a polySi surface, which has higher surface roughness. This same phenomenon is observed in **"Analysis of blister formation in spatial ALD** ![](data:image/gif;base64,R0lGODlhAQABAIAAAP///wAAACH5BAEAAAAALAAAAAABAAEAAAICRAEAOw==) **for silicon surface passivation in photovoltaics"** by **L. Hennen**, as seen by the figure below, where "wafer side B" has notably higher surface roughness than "wafer Side A."
From all these observations, it is conlcluded that the blisters are a result of the surface prepartion techniques, and HF last RCA cleaning is neccesssary over standard RCA clean to prevent blister defects and allow for use of sputtered Al2O3 as a gate dielectric. ## Device data (MOSCap, TLM, MOSFET) To be completed by 4/6/26 #### MOSCap Capacitance and Conductance Profiling Summary/Comparison
| Processing Conditions | Al2O3 thickness (nm) | K (raw data) | K (slope method, raw data) | Vfb (P -> N, raw data) | Vfb (N -> P, raw data) | delta Vfb (raw data) | k (corrected data) | k (slope method, corrected data) | Vfb (P -> N, corrected data) | Vfb (N -> P, corrected data) | delta Vfb (corrected data) | G peak (Siemens) (P -> N) | G peak (Siemens) (N -> P) | Series Resistance (Ohms) (calculated) | | --------------------------------- | -------------------- | ------------ | -------------------------- | ---------------------- | ---------------------- | -------------------- | ------------------ | -------------------------------- | ---------------------------- | ---------------------------- | -------------------------- | ------------------------- | ------------------------- | ------------------------------------- | | Standard RCA clean | 45 | 7.1 | 4.7 | -0.20 | -1.15 | 0.95 | 7.2 | 4.9 | -0.20 | -1.10 | 0.90 | 2.2E-05 | 2.3E-05 | 565.95 | | Standard RCA clean | 15 | 5.3 | 2.4 | -0.80 | -1.20 | 0.40 | 5.5 | 2.5 | -0.70 | -1.00 | 0.30 | 8.3E-05 | 8.3E-05 | 495.45 | | HF-Last RCA clean | 45 | 7.4 | 4.7 | -1.90 | -2.20 | 0.30 | 7.4 | 4.8 | -1.85 | -2.15 | 0.30 | 1.9E-05 | 2.0E-05 | 260.67 | | HF-Last RCA clean | 20 | 6.6 | 3.2 | -1.05 | -1.85 | 0.80 | 6.7 | 3.4 | -0.95 | -1.70 | 0.75 | 7.5E-05 | 8.3E-05 | 289.87 | | HF-Last RCA clean, 450C O2 anneal | 20 | 4.7 | 2.8 | -4.35 | -4.70 | 0.35 | 5.3 | 3.1 | -4.15 | -4.45 | 0.30 | 8.1E-05 | 9.0E-05 | 910.06 | #### MOSCap Leakage Current
#### MOSFETs and TLM Test Structures
Step #Step NameParametersLayer Stacks
0Substrate Stackp-Si 5-10 ohm (100): 525 µm
1Acetone + IPA Clean (N2 dry)Cleaning Agent: Acetone then IPA
Squirt with Acetone, then IPA, then dry the surface with the N2 gun.
2BakeBake Temperature: 100 °C
Bake Time: 60 secs
3Spin-CoatMaterial Type: Adhesion Promoter
Material: HMDS
Spin Speed: 4000 rpm
Spin Time: 30 secs
4BakeBake Temperature: 100 °C
Bake Time: 60 secs
5Spin ResistResist: AZ P4210
Resist Type: Positive
Spin Speed: 4000 rpm
Spin Time: 30 secs
6BakeBake Temperature: 100 °C
Bake Time: 90 secs
7Hacker Fab Maskless Litho StepperExposure time: 8 secs
8DevelopDeveloper: AZ 400K : DI Water (1:3)
Develop Time: 30 secs
9Wet-EtchActually performed with SF6 RIE, but can be replaced by a Nitric + HF wet etch solution since this step simply creates alignment marks in the Si.
10Wet Strip ResistStripping Agent(s): Acetone then IPA
Blow dry with N2 gun after.
11RCA CleanSC 1 Constituents: H2O:NH4OH(29%):H2O2(30%) (5:1:1)
SC 1 Cleaning Time: 10 mins
SC 1 Cleaning Temperature: 80 °C
HF Concentration: 6:1 BOE
HF Dip Time: 15 secs
HF Dip Temperature: 20 °C
SC 2 Constituents: H2O:HCl(37%):H2O2(30%) (6:1:1)
SC 2 Cleaning Time: 10 mins
SC 2 Cleaning Temperature: 80 °C
12Spin-CoatMaterial Type: Non-Resist
Material: 700B (spin on glass)
Spin Speed: 4000 rpm
Spin Time: 20 secs
13BakeBake Temperature: 400 °C
Bake Time: 10 mins
14Spin-CoatMaterial Type: Adhesion Promoter
Material: HMDS
Spin Speed: 4000 rpm
Spin Time: 30 secs
15BakeBake Temperature: 100 °C
Bake Time: 60 secs
16Spin ResistResist: AZ P4210
Resist Type: Positive
Spin Speed: 4000 rpm
Spin Time: 30 secs
17BakeBake Temperature: 100 °C
Bake Time: 90 secs
18Hacker Fab Maskless Litho StepperExposure time: 8 secs
19DevelopDeveloper: AZ 400K : DI Water (1:3)
Develop Time: 30 secs
20Wet-EtchEtch Time: 20 secs
Etching Agent(s): 6:1 BOE
21Wet Strip ResistStripping Agent(s): Acetone then IPA
Blow dry with N2 gun after.
22Spin-On DopantSpin-On Dopant Name: P504 (Phosphorus source)
Spin Speed: 4000 rpm
Spin Time: 20 secs
23BakeBake Temperature: 200 °C
Bake Time: 10 mins
24Dopant DiffusionDiffusion Time: 30 mins
Diffusion Temperature: 1100 °C
Environmental: false
25Wet-EtchEtch Time: 10 mins
Etching Agent(s): 6:1 BOE
26RCA CleanSC 1 Constituents: H2O:NH4OH(29%):H2O2(30%) (5:1:1)
SC 1 Cleaning Time: 10 mins
SC 1 Cleaning Temperature: 80 °C
HF Concentration: 6:1 BOE
HF Dip Time: 15 secs
HF Dip Temperature: 20 °C
SC 2 Constituents: H2O:HCl(37%):H2O2(30%) (6:1:1)
SC 2 Cleaning Time: 80 mins
SC 2 Cleaning Temperature: 75 °C
27Sputter w/ CMU Hacker Fab RF Sputtering ChamberMaterial: Al2O3
Film thickness: 20 nm
Deposition Rate: .25 Å/s
Deposition Time: 80 mins
Sputter Type: RF Sputtering
RF or DC Power: 100 Watts
Sputter Gas Composition: 9 SCCM UHP Ar : 9 SCCM UHP O2
Chamber Pressure: 4.7E-3 Torr
Throw Distance: 3"
Base Pressure Pre Deposition: 1E-7 Torr
Target Sputter Clean Ar Flow: 30 SCCM
Target Sputter Clean Time: 15 Minutes
SWR During Deposition: 1.5
28Sputter w/ CMU Hacker Fab RF Sputtering ChamberMaterial: Al
Film thickness: 150 nm
Deposition Rate: 2.5 Å/s
Deposition Time: 60 mins
Sputter Type: RF Sputtering
RF or DC Power: 100 Watts
Sputter Gas Composition: 15 SCCM UHP Ar
Chamber Pressure: 3E-3 Torr
Throw Distance: 3"
Base Pressure Pre Deposition: 1E-7 Torr
Target Sputter Clean Ar Flow: 30 SCCM
Target Sputter Clean Time: 15 Minutes
SWR During Deposition: 1.5
29Spin ResistResist: AZ P4210
Resist Type: Positive
Spin Speed: 4000 rpm
Spin Time: 30 secs
30BakeBake Temperature: 100 °C
Bake Time: 90 secs
31Hacker Fab Maskless Litho StepperExposure time: 8 secs
32DevelopDeveloper: AZ 400K : DI Water (1:3)
Develop Time: 30 secs
33Wet-EtchEtch Time: 8 mins
Etching Agent(s): Type A Al Etch (PAN)
Etch Temperature: 40 °C
34Wet Strip ResistStripping Agent(s): Acetone then IPA
Blow dry with N2 gun after.
35Spin-CoatMaterial Type: Non-Resist
Material: 700B (spin on glass)
Spin Speed: 4000 rpm
Spin Time: 20 secs
36BakeBake Temperature: 400 °C
Bake Time: 10 mins
37Spin-CoatMaterial Type: Adhesion Promoter
Material: HMDS
Spin Speed: 4000 rpm
Spin Time: 30 secs
38BakeBake Temperature: 100 °C
Bake Time: 60 secs
39Spin ResistResist: AZ P4210
Resist Type: Positive
Spin Speed: 4000 rpm
Spin Time: 30 secs
40BakeBake Temperature: 100 °C
Bake Time: 90 secs
41Hacker Fab Maskless Litho StepperExposure time: 8 secs
42DevelopDeveloper: AZ 400K : DI Water (1:3)
Develop Time: 30 secs
43Wet-EtchEtch Time: 20 secs
Etching Agent(s): 6:1 BOE
44Wet Strip ResistStripping Agent(s): Acetone then IPA
Blow dry with N2 gun after.
45Sputter w/ CMU Hacker Fab RF Sputtering ChamberMaterial: Al
Film thickness: 300 nm
Deposition Rate: 2.5 Å/s
Deposition Time: 120 mins
Sputter Type: RF Sputtering
RF or DC Power: 100 Watts
Sputter Gas Composition: 15 SCCM UHP Ar
Chamber Pressure: 3E-3 Torr
Throw Distance: 3"
Base Pressure Pre Deposition: 1E-7 Torr
Target Sputter Clean Ar Flow: 30 SCCM
Target Sputter Clean Time: 15 Minutes
SWR During Deposition: 1.5
46Spin ResistResist: AZ P4210
Resist Type: Positive
Spin Speed: 4000 rpm
Spin Time: 30 secs
47BakeBake Temperature: 100 °C
Bake Time: 90 secs
48Hacker Fab Maskless Litho StepperExposure time: 8 secs
49DevelopDeveloper: AZ 400K : DI Water (1:3)
Develop Time: 30 secs
50Wet-EtchEtch Time: 4 mins
Etching Agent(s): Type A Al Etchant (PAN)
51Wet Strip ResistStripping Agent(s): Acetone then IPA
Blow dry with N2 gun after.
Steps 12-25 replaced by the below sequence in chip 1 for "maskless" diffusion: |

Spin-On and Bake P504 Dopant
(400 rpm 20s, 200C 10 mins)

| ![](data:image/png;base64,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) | | ------------------------------------------------------------------ | 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| | Pattern on top of P504 Dopant | ![](data:image/png;base64,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) | | Wet-Etch P504 Dopant with 6:1 BOE (20s) | ![](data:image/png;base64,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) | | Dopant Diffusion (1100C 30 mins) | ![](data:image/png;base64,iVBORw0KGgoAAAANSUhEUgAAAH0AAAB9CAYAAACPgGwlAAAE30lEQVR4Aezau2sUURQG8Dujm8VVJAg+wAeIIBJQLCwsLBREC0XBUrHTbYRop9gYxEoU0igkwUawtAyIYhr/h7TGJKh5aJJds5DH7njHaXZG8e5m5uSee88ne5fMcufMOd8vs64mocIfcQkAXRy5UkAHusAEBI6MOx3oAhMQODLudKALTEDgyFR3usAo3RkZ6O5YFdYp0AuL0p1CQHfHqrBOgV5YlO4UAro7VoV1CvTConSnENDdsSqsU9fQCxtcciGgC9QHOtAFJiBwZNzpQBeYgMCRcacDXWACAkfGnZ6gi3oGuijuZFigJzmIega6KO5kWKAnOYh6Broo7mRYoCc5iHoGuijuZFigJzlQPbOsC3SWLLRNAZ02X5bVgc6ShbYpoNPmy7I60Fmy0DYFdNp8WVYHOksW2qaATpsvVfVcdYGeKz43Twa6m265ugZ6rvjcPBnobrrl6hroueJz82Sgu+mWq2ug54rPzZOB7qZbrq7/g56rLk5mnADQGeNQtQZ0qmQZ1wU6Yxyq1oBOlSzjukBnjEPVGtCpkmVcF+iMcahas4BONQrqdpoA0DtNyqN9QPcIs9NRgN5pUh7tA7pHmJ2OAvROk/JoH9A9wux0FKB3mpRH+zxC90iFeBSgEwfMsTzQOaoQ9wR04oA5lgc6RxXinoBOHDDH8kDnqELcE9CJA+ZYHuhGFf82AN0/U+NEQDdG5N8GoPtnapwI6MaI/NsAdP9MjRMB3RiRfxuA7p+pcSKgGyOi2mCvLtDtZW/tykC3Fr29CwPdXvbWrgx0a9HbuzDQ7WVv7cpAtxa9vQsD3V721q4MdGvRU13YXBfo5oy82wF070jNAwHdnJF3O4DuHal5IKCbM/Jux4bQb9XrZ28tLPSzWouLhyl1bs/NHWU1b5z/0tLpjcy8IfSo2TyvL/aA02pG0SHdD92jXD6mi7OaWbVam4euh8fD4QQ2dKcrhwdG60oBXeB3AdCBLjABgSPjTge6wAQEjow7HegCExA4Mq87XSCAjZHDoaGh0vDw8OWRkZFrmbU329Dz92NXnn38dLN3/ufxynJjG6d1YPLrhbi3wdHR65k5snN1dTw4+u56XHfP5PQ5TvPGveyamz8V9zb4Yexi1kq7HsrmoF+7NDAwEIa1Wq1Hn/BKr7eZ9fcPMHq2PorKpdf7vs9eOTgx1ctp7azXH8a9qWDLm8wc2bm6Oo62hG/iur2LtXuc5o172T3740bcW2tr6a6eOfUIguCkfiE1axiGI319fUFXb+/h2npDF2L9CJrNQvsLmq1C61EUC1ZXlrup2xX69snP9e1TE6oyPcl0fVHb5ma6md+4tzLzjemsiUHssWNqgg49jCJV+lVXPfUlpqumir/T15nOuvSnr9hDaRfjd2/bhrBSqei3/2BNv7aaWVf1B4Fq+4qiaH9mT/YcHCu16RlowCPtTvHX+rUL/7BaGx8fD8JGo6Eto5LeEH+ga1/xLwwM6dfb1wl93L4HXytlPQMNeEa7tDvFX9/Rr2V7K+kPclFXf6frIm4+0HUqAaCn4pBxAHQZzqkpgZ6KQ8YB0GU4p6YEeioOGQdAl+GcmhLoqThkHITlcnldj/pC/wP/KVbUXQaRc/tf6v+Ri8L+/v6VarX6WK/7WFXfM3iif57ewtu7fpuT9vgNAAD//0k7voAAAAAGSURBVAMAEHYAZPzYjVIAAAAASUVORK5CYII=) | #### MOSFET masks, images, and results {% stepper %} {% step %} ### pattern and etch alignment marks into Si
{% endstep %} {% step %} ### spin on glass (dopant mask), pattern and etch source/drain regions
{% endstep %} {% step %} ### spin on dopant, diffuse
{% endstep %} {% step %} ### etch/clean off dopant, sputter gate films, pattern and etch gates
{% endstep %} {% step %} ### spin on glass, pattern and etch contact holes
{% endstep %} {% step %} ### sputter Al, pattern and etch contact pads
{% endstep %} {% endstepper %} All curves below recorded on lower row (50 um gate length, 21.4 um channel length) Chip 1 electrical testing
Chip 2 pre anneal electrical testing
Chip 2 post anneal electrical testing
Chip/ProcessingOn Current Vd=5, Vg=0 (A)Off Current Vd=5, Vg=0 (A)On/Off Ratio Vd = 5
Chip 1 "maskless" doping3.2E-38.8E-43.6
Chip 2 "masked" doping - best4.4E-41.2E-6369
Chip 2 400C annealed "masked" doping4.9E-42.2E-6227
#### TLM Structures (contact resistance and sheet resistance results) Built on same chip(s) as FETs
| Processing | Specific contact resistance (ohm-cm^2) | Sheet Resistance (ohm/square) | | -------------------------------------- | -------------------------------------- | ----------------------------- | | Chip 1 "maskless doping" | 7.15E-4 | 56.32 | | Chip 2 "masked doping" | 1.78E-3 | 113.25 | | Chip 2 "masked doping" - 400C annealed | 3.75E-4 | 92.27 | ## Appendix #### 9:9, 3hr, Standard RCA Clean
| size (area) | frequency | area\_mm2 | k\_avg\_raw | k\_slope\_avg\_raw | Vfb\_PN\_avg\_raw | Vfb\_NP\_avg\_raw | deltaVfb\_avg\_raw | k\_avg\_corrected | k\_slope\_avg\_corrected | Vfb\_PN\_avg\_corrected | Vfb\_NP\_avg\_corrected | deltaVfb\_avg\_corrected | Gpeak\_PN\_S | Gpeak\_NP\_S | Rs\_mean\_ohm | | ----------------- | --------: | --------: | ----------: | -----------------: | ----------------: | ----------------: | -----------------: | ----------------: | -----------------------: | ----------------------: | ----------------------: | -----------------------: | -----------: | -----------: | ------------: | | Small (0.2 mm²) | 10KHz | 0.20 | 7.428647 | 5.073352 | 0.35 | -0.90 | 1.25 | 9.863421 | 4.937214 | 0.05 | -1.35 | 1.40 | 0.000012 | 0.000012 | 20992.490094 | | Small (0.2 mm²) | 100KHz | 0.20 | 7.114325 | 4.743494 | -0.20 | -1.15 | 0.95 | 7.186758 | 4.910686 | -0.20 | -1.10 | 0.90 | 0.000022 | 0.000023 | 565.949437 | | Small (0.2 mm²) | 1MHz | 0.20 | 6.768461 | 1.728415 | -0.60 | -1.40 | 0.80 | 7.379437 | 6.553137 | -0.50 | -1.30 | 0.80 | 0.000512 | 0.000514 | 165.844804 | | Medium (0.79 mm²) | 10KHz | 0.79 | 6.697895 | 5.073352 | 0.45 | -0.60 | 1.05 | 6.800300 | 4.937214 | 0.50 | -0.55 | 1.05 | 0.000009 | 0.000010 | 1349.595597 | | Medium (0.79 mm²) | 100KHz | 0.79 | 6.529448 | 4.743494 | -0.10 | -0.95 | 0.85 | 6.571378 | 4.910686 | 0.00 | -0.85 | 0.85 | 0.000095 | 0.000099 | 124.666071 | | Medium (0.79 mm²) | 1MHz | 0.79 | 5.318851 | 1.728415 | -0.45 | -1.30 | 0.85 | 7.888473 | 6.553137 | -0.40 | -1.25 | 0.85 | 0.003640 | 0.003644 | 90.601948 | | Large (1.77 mm²) | 10KHz | 1.77 | 5.409678 | 5.073352 | 0.40 | -0.25 | 0.65 | 5.535893 | 4.937214 | 0.45 | -0.10 | 0.55 | 0.000023 | 0.000023 | 1002.470871 | | Large (1.77 mm²) | 100KHz | 1.77 | 5.092326 | 4.743494 | -0.15 | -0.60 | 0.45 | 5.241898 | 4.910686 | 0.00 | -0.45 | 0.45 | 0.000241 | 0.000233 | 132.262058 | | Large (1.77 mm²) | 1MHz | 1.77 | 2.455902 | 1.728415 | -0.35 | -0.40 | 0.05 | 6.723377 | 6.553137 | -0.45 | -0.50 | 0.05 | 0.006887 | 0.006341 | 107.769918 | #### 9:9, 1hr, Standard RCA Clean
| size (area) | frequency | area\_mm2 | k\_avg\_raw | k\_slope\_avg\_raw | Vfb\_PN\_avg\_raw | Vfb\_NP\_avg\_raw | deltaVfb\_avg\_raw | k\_avg\_corrected | k\_slope\_avg\_corrected | Vfb\_PN\_avg\_corrected | Vfb\_NP\_avg\_corrected | deltaVfb\_avg\_corrected | Gpeak\_PN\_S | Gpeak\_NP\_S | Rs\_mean\_ohm | | ----------------- | --------: | --------: | ----------: | -----------------: | ----------------: | ----------------: | -----------------: | ----------------: | -----------------------: | ----------------------: | ----------------------: | -----------------------: | -----------: | -----------: | ------------: | | Small (0.2 mm²) | 10KHz | 0.20 | 6.141816 | 0.904621 | -0.30 | -1.00 | 0.70 | 13.045352 | 0.173698 | -0.75 | -0.80 | 0.05 | 0.000052 | 0.000056 | 9025.245375 | | Small (0.2 mm²) | 100KHz | 0.20 | 5.301111 | 2.379235 | -0.80 | -1.20 | 0.40 | 5.513058 | 2.470873 | -0.70 | -1.00 | 0.30 | 0.000083 | 0.000083 | 495.445897 | | Small (0.2 mm²) | 1MHz | 0.20 | 3.828395 | 0.381960 | -1.10 | -1.55 | 0.45 | 5.758140 | 3.908771 | -1.00 | -1.35 | 0.35 | 0.002048 | 0.002042 | 166.487007 | | Medium (0.79 mm²) | 10KHz | 0.79 | 3.996518 | 0.904621 | -0.25 | -0.60 | 0.35 | 5.358427 | 0.173698 | -0.40 | -0.70 | 0.30 | 0.000075 | 0.000072 | 3649.048078 | | Medium (0.79 mm²) | 100KHz | 0.79 | 3.610729 | 2.379235 | -0.55 | -0.95 | 0.40 | 3.720343 | 2.470873 | -0.50 | -0.80 | 0.30 | 0.000190 | 0.000199 | 159.210655 | | Medium (0.79 mm²) | 1MHz | 0.79 | 1.724243 | 0.381960 | -0.85 | -1.25 | 0.40 | 4.774321 | 3.908771 | -1.00 | -1.30 | 0.30 | 0.006874 | 0.006886 | 95.271610 | | Large (1.77 mm²) | 10KHz | 1.77 | 1.616946 | 0.904621 | -1.45 | -0.60 | 0.85 | 1.759600 | 0.173698 | -1.40 | -0.60 | 0.80 | 0.000002 | 0.000061 | 1696.143692 | | Large (1.77 mm²) | 100KHz | 1.77 | 2.742960 | 2.379235 | -0.35 | -0.75 | 0.40 | 2.847340 | 2.470873 | -0.35 | -0.70 | 0.35 | 0.000355 | 0.000355 | 104.022923 | | Large (1.77 mm²) | 1MHz | 1.77 | 0.803455 | 0.381960 | -0.40 | -0.75 | 0.35 | 4.144864 | 3.908771 | -0.55 | -0.95 | 0.40 | 0.010591 | 0.010604 | 77.807216 | #### 9:9, 3 hr, HF last
| size (area) | frequency | area\_mm2 | k\_avg\_raw | k\_slope\_avg\_raw | Vfb\_PN\_avg\_raw | Vfb\_NP\_avg\_raw | deltaVfb\_avg\_raw | k\_avg\_corrected | k\_slope\_avg\_corrected | Vfb\_PN\_avg\_corrected | Vfb\_NP\_avg\_corrected | deltaVfb\_avg\_corrected | Gpeak\_PN\_S | Gpeak\_NP\_S | Rs\_mean\_ohm | | ----------------- | --------: | --------: | ----------: | -----------------: | ----------------: | ----------------: | -----------------: | ----------------: | -----------------------: | ----------------------: | ----------------------: | -----------------------: | -----------: | -----------: | ------------: | | Small (0.2 mm²) | 10KHz | 0.20 | 7.685834 | 5.625961 | -1.45 | -1.90 | 0.45 | 7.766772 | 5.877118 | -1.40 | -1.85 | 0.45 | 0.000002 | 0.000002 | 3053.672852 | | Small (0.2 mm²) | 100KHz | 0.20 | 7.396978 | 4.707130 | -1.90 | -2.20 | 0.30 | 7.414154 | 4.847823 | -1.85 | -2.15 | 0.30 | 0.000019 | 0.000020 | 260.665467 | | Small (0.2 mm²) | 1MHz | 0.20 | 6.890245 | 2.242337 | -2.25 | -2.55 | 0.30 | 7.407294 | 4.727527 | -2.20 | -2.45 | 0.25 | 0.000470 | 0.000471 | 148.915132 | | Medium (0.79 mm²) | 10KHz | 0.79 | 7.129632 | 5.625961 | -0.90 | -1.30 | 0.40 | 7.175604 | 5.877118 | -0.85 | -1.25 | 0.40 | 0.000008 | 0.000009 | 1143.266648 | | Medium (0.79 mm²) | 100KHz | 0.79 | 6.360197 | 4.707130 | -1.25 | -1.60 | 0.35 | 6.415378 | 4.847823 | -1.20 | -1.55 | 0.35 | 0.000085 | 0.000090 | 147.965410 | | Medium (0.79 mm²) | 1MHz | 0.79 | 5.041438 | 2.242337 | -1.55 | -1.95 | 0.40 | 6.663681 | 4.727527 | -1.50 | -1.85 | 0.35 | 0.002853 | 0.002849 | 87.454312 | | Large (1.77 mm²) | 10KHz | 1.77 | 5.925761 | 5.625961 | -1.75 | -2.05 | 0.30 | 6.146619 | 5.877118 | -1.60 | -1.85 | 0.25 | 0.000026 | 0.000026 | 1447.212115 | | Large (1.77 mm²) | 100KHz | 1.77 | 5.077424 | 4.707130 | -2.15 | -2.35 | 0.20 | 5.200458 | 4.847823 | -2.05 | -2.25 | 0.20 | 0.000191 | 0.000195 | 136.210088 | | Large (1.77 mm²) | 1MHz | 1.77 | 2.878274 | 2.242337 | -2.25 | -2.50 | 0.25 | 5.116181 | 4.727527 | -2.30 | -2.55 | 0.25 | 0.005637 | 0.005627 | 79.692297 | #### 9:9, 80 min, HF last
| size (area) | frequency | area\_mm2 | k\_avg\_raw | k\_slope\_avg\_raw | Vfb\_PN\_avg\_raw | Vfb\_NP\_avg\_raw | deltaVfb\_avg\_raw | k\_avg\_corrected | k\_slope\_avg\_corrected | Vfb\_PN\_avg\_corrected | Vfb\_NP\_avg\_corrected | deltaVfb\_avg\_corrected | Gpeak\_PN\_S | Gpeak\_NP\_S | Rs\_mean\_ohm | | ----------------- | --------: | --------: | ----------: | -----------------: | ----------------: | ----------------: | -----------------: | ----------------: | -----------------------: | ----------------------: | ----------------------: | -----------------------: | -----------: | -----------: | ------------: | | Small (0.2 mm²) | 10KHz | 0.20 | 7.226328 | 4.517307 | -0.30 | -1.45 | 1.15 | 11.470554 | 4.553309 | -1.85 | -1.70 | 0.15 | 0.000034 | 0.000027 | 3265.030912 | | Small (0.2 mm²) | 100KHz | 0.20 | 6.614153 | 3.185460 | -1.05 | -1.85 | 0.80 | 6.721767 | 3.417425 | -0.95 | -1.70 | 0.75 | 0.000075 | 0.000083 | 289.871676 | | Small (0.2 mm²) | 1MHz | 0.20 | 4.991604 | 0.455764 | -1.55 | -2.45 | 0.90 | 7.040173 | 5.204334 | -1.35 | -2.05 | 0.70 | 0.001855 | 0.001850 | 162.998687 | | Medium (0.79 mm²) | 10KHz | 0.79 | 6.424663 | 4.517307 | -0.45 | -1.65 | 1.20 | 6.597815 | 4.553309 | -0.40 | -1.55 | 1.15 | 0.000027 | 0.000027 | 1121.137288 | | Medium (0.79 mm²) | 100KHz | 0.79 | 5.074745 | 3.185460 | -1.15 | -1.90 | 0.75 | 5.259125 | 3.417425 | -1.10 | -1.75 | 0.65 | 0.000245 | 0.000268 | 163.635326 | | Medium (0.79 mm²) | 1MHz | 0.79 | 2.018435 | 0.455764 | -1.50 | -2.35 | 0.85 | 6.804791 | 5.204334 | -1.50 | -2.25 | 0.75 | 0.006929 | 0.006923 | 105.118284 | | Large (1.77 mm²) | 10KHz | 1.77 | 4.906795 | 4.517307 | -0.90 | -1.85 | 0.95 | 5.354940 | 4.553309 | -0.85 | -1.70 | 0.85 | 0.000085 | 0.000083 | 1191.643675 | | Large (1.77 mm²) | 100KHz | 1.77 | 3.642597 | 3.185460 | -1.60 | -2.20 | 0.60 | 3.859411 | 3.417425 | -1.50 | -2.00 | 0.50 | 0.000497 | 0.000502 | 128.614905 | | Large (1.77 mm²) | 1MHz | 1.77 | 0.996573 | 0.455764 | -1.75 | -2.35 | 0.60 | 5.489297 | 5.204334 | -1.90 | -2.45 | 0.55 | 0.010393 | 0.010387 | 82.599948 | #### 9:9, 80 min, HF last, 450C 30 min O2 anneal
| size (area) | frequency | area\_mm2 | k\_avg\_raw | k\_slope\_avg\_raw | Vfb\_PN\_avg\_raw | Vfb\_NP\_avg\_raw | deltaVfb\_avg\_raw | k\_avg\_corrected | k\_slope\_avg\_corrected | Vfb\_PN\_avg\_corrected | Vfb\_NP\_avg\_corrected | deltaVfb\_avg\_corrected | Gpeak\_PN\_S | Gpeak\_NP\_S | Rs\_mean\_ohm | | ----------------- | --------: | --------: | ----------: | -----------------: | ----------------: | ----------------: | -----------------: | ----------------: | -----------------------: | ----------------------: | ----------------------: | -----------------------: | -----------: | -----------: | ------------: | | Small (0.2 mm²) | 10KHz | 0.20 | 5.725439 | 3.625706 | -3.35 | -4.30 | 0.95 | 10.969794 | 3.796601 | -3.20 | -4.55 | 1.35 | 0.000007 | 0.000026 | 4665.743838 | | Small (0.2 mm²) | 100KHz | 0.20 | 4.742700 | 2.765370 | -4.35 | -4.70 | 0.35 | 5.292607 | 3.124594 | -4.15 | -4.45 | 0.30 | 0.000081 | 0.000090 | 910.056283 | | Small (0.2 mm²) | 1MHz | 0.20 | 2.901555 | 0.793532 | -4.75 | -4.95 | 0.20 | 4.029582 | 2.940564 | -4.65 | -4.85 | 0.20 | 0.000823 | 0.000622 | 273.774244 | | Medium (0.79 mm²) | 10KHz | 0.79 | 4.972657 | 3.625706 | -3.15 | -4.30 | 1.15 | 5.803228 | 3.796601 | -2.95 | -3.70 | 0.75 | 0.000029 | 0.000053 | 2254.233872 | | Medium (0.79 mm²) | 100KHz | 0.79 | 3.760431 | 2.765370 | -4.50 | -4.75 | 0.25 | 4.186907 | 3.124594 | -4.30 | -4.55 | 0.25 | 0.000289 | 0.000286 | 309.539446 | | Medium (0.79 mm²) | 1MHz | 0.79 | 1.665962 | 0.793532 | -4.75 | -4.95 | 0.20 | 3.416144 | 2.940564 | -4.80 | -5.00 | 0.20 | 0.002619 | 0.001648 | 137.554599 | | Large (1.77 mm²) | 10KHz | 1.77 | 3.918623 | 3.625706 | -3.10 | -4.35 | 1.25 | 4.620144 | 3.796601 | -3.05 | -3.90 | 0.85 | 0.000062 | 0.000073 | 1385.010681 | | Large (1.77 mm²) | 100KHz | 1.77 | 3.022550 | 2.765370 | -4.30 | -4.65 | 0.35 | 3.404616 | 3.124594 | -4.10 | -4.50 | 0.40 | 0.000523 | 0.000518 | 210.306410 | | Large (1.77 mm²) | 1MHz | 1.77 | 1.054850 | 0.793532 | -4.35 | -4.65 | 0.30 | 3.077261 | 2.940564 | -4.65 | -4.90 | 0.25 | 0.005672 | 0.003891 | 97.212422 |