💻CMOS - sputtered gate stack (WIP)

Overview

This is in support of the development of a CMOS process that uses a Si-Al2O3-Al gate stack. The NMOS process originally developed with Hacker Fab tooling relies on procuring wafers that already have a Si-SiO2-PolySi prefabricated gate. This prevents the expansion of the NMOS process into a CMOS process. For a CMOS process, it is necessary for the gate stack to be fabricated in house with Hacker Fab tooling. Sputtering of the gate stack from just an Al target is pursued as a potential option to mitigate the risks associated with gate oxide contamination. For context, growing a SiO2 gate oxide has been considered, but abandoned due to a few challenges. The main being contamination control of the gate oxide in an open air tube furnace, contamination that can be introduced between oxide growth and metal deposition for the gate, and the added complexity of dopant pile up + depletion (discussed in the Oxidation Effects Section of "Microchip Fabrication: A Practical Guide to Semiconductor Processing by Peter Van Zant"). Overall this intended process simplifies the tooling required to tape out devices (cuts out evaporator and plasma etcher). Sputtering allows for a low contamination oxide to be deposited, which is immediately covered with a metal gate contact without the chip ever exiting the clean vacuum environment of the sputtering chamber. The choice of Al2O3 as the oxide and Al as the metal is motivated by simplified process flow it allows, and relatively inexpensive target material (Al2O3 is sputtered reactively form an Al target, then Al is sputtered immediately after from the same target, avoiding the need for a 2 target system or a target swapping). Al2O3 has favorable dielectric constant and band alignment, but there are risks related to charge traps forming at the Si-Al2O3 interface. Attempts are made to tune the process to mitigate this interface effect.

Thus far only NMOS devices have been fabbed to verify effectiveness of sputtered gate oxide. Details on n well doping process dev to allow for CMO devices coming soon

More details on general approach and methods and next steps coming soon

The sputtered film characterization that precedes this work is linked below.

Film Characterization

MOSCap Capacitance and Conductance Profiling

MOSCap Capacitance and Conductance Profiling

MOSCap devices were fabricated from the sputtered Al and Al2O3 for Conductave-Voltage and Capacititacne voltage profiling. They were fabricated from the process flow inlcuded below from prime p-Si 5-10 ohm (100) wafers. Oxide thickness, surafce preparation method, and post oxide deposition anealing were modulated to study the impact on capcitance and conductance testing.The individual MOSCaps were defined by applying a shadowmask in between the oxide Deposition nad the firt Al deposition.

0	Substrate Stack	Si p-type 5-10 ohms (100): 525 µm	​​
1	RCA Clean	SC 1 Constituents: H2O:NH4OH(29%):H2O2(30%) (5:1:1) SC 1 Cleaning Time: 10 mins SC 1 Cleaning Temperature: 80 °C HF Concentration: 6:1 BOE HF Dip Time: 15 secs HF Dip Temperature: 20 °C SC 2 Constituents: H2O:HCl(37%):H2O2(30%) (6:1:1) SC 2 Cleaning Time: 10 mins SC 2 Cleaning Temperature: 80 °C "SC 1 and 2 mixed in 50ml pyrex beakers directly before using. Optional HF last processing step (Experimental Option) Rinsed with DI Water then N2 dried. Immediately placed into sputtering chamber for pump down."	​​
2	Sputter w/ CMU Hacker Fab RF Sputtering Chamber	Material: Al2O3 Film thickness: Experimental Option Deposition Rate: .00025 µm/min Deposition Time: 80 mins Sputter Type: RF Sputtering RF or DC Power: 100 Watts Sputter Gas Composition: 9 SCCM UHP Ar : 9 SCCM UHP O2 Chamber Pressure: 4.7E-3 Torr Throw Distance: 3" Base Pressure Pre Deposition: 1E-7 Torr Target Sputter Clean Ar Flow: 30 SCCM Target Sputter Clean Time: 15 Minutes	​​
3	Anneal (Experimental Option)	Performed in RF sputtering Chamber under partial Vacuum. Pump speed at 250Hz with 50 SCCM of either UHP Ar or UHP O2.	​​
4	Sputter w/ CMU Hacker Fab RF Sputtering Chamber	Material: Al Film thickness: 150 nm Deposition Rate: .0025 µm/min Deposition Time: 60 mins Sputter Type: RF Sputtering RF or DC Power: 100 Watts Sputter Gas Composition: 15 SCCM UHP Ar Chamber Pressure: 3E-3 Torr Throw Distance: 3" Base Pressure Pre Deposition: 1E-7 Torr Target Sputter Clean Ar Flow: 30 SCCM Target Sputter Clean Time: 15 Minutes SWR During Deposition: 1.5	​​
6	Sputter w/ CMU Hacker Fab RF Sputtering Chamber	Material: Al Film thickness: 150 nm Deposition Rate: .0025 µm/min Deposition Time: 60 mins Sputter Type: RF Sputtering RF or DC Power: 100 Watts Sputter Gas Composition: 15 SCCM UHP Ar Chamber Pressure: 3E-3 Torr Throw Distance: 3" Base Pressure Pre Deposition: 1E-7 Torr Target Sputter Clean Ar Flow: 30 SCCM Target Sputter Clean Time: 15 Minutes SWR During Deposition: 1.5	​​

Summary/Comparison

Processing Conditions	Al2O3 thickness (nm)	K (raw data)	K (slope method, raw data)	Vfb (P -> N, raw data)	Vfb (N -> P, raw data)	delta Vfb (raw data)	k (corrected data)	k (slope method, corrected data)	Vfb (P -> N, corrected data)	Vfb (N -> P, corrected data)	delta Vfb (corrected data)	G peak (Siemens) (P -> N)	G peak (Siemens) (N -> P)	Series Resistance (Ohms) (calculated)
Standard RCA clean	45	7.1	4.7	-0.20	-1.15	0.95	7.2	4.9	-0.20	-1.10	0.90	2.2E-05	2.3E-05	565.95
Standard RCA clean	15	5.3	2.4	-0.80	-1.20	0.40	5.5	2.5	-0.70	-1.00	0.30	8.3E-05	8.3E-05	495.45
HF-Last RCA clean	45	7.4	4.7	-1.90	-2.20	0.30	7.4	4.8	-1.85	-2.15	0.30	1.9E-05	2.0E-05	260.67
HF-Last RCA clean	20	6.6	3.2	-1.05	-1.85	0.80	6.7	3.4	-0.95	-1.70	0.75	7.5E-05	8.3E-05	289.87
HF-Last RCA clean, 450C O2 anneal	20	4.7	2.8	-4.35	-4.70	0.35	5.3	3.1	-4.15	-4.45	0.30	8.1E-05	9.0E-05	910.06

MOSCap Leakage Current

MOSFETs and TLM Test Structures

Step #	Step Name	Parameters	Layer Stacks
0	Substrate Stack	p-Si 5-10 ohm (100): 525 µm
1	Acetone + IPA Clean (N2 dry)	Cleaning Agent: Acetone then IPA Squirt with Acetone, then IPA, then dry the surface with the N2 gun.
2	Bake	Bake Temperature: 100 °C Bake Time: 60 secs
3	Spin-Coat	Material Type: Adhesion Promoter Material: HMDS Spin Speed: 4000 rpm Spin Time: 30 secs
4	Bake	Bake Temperature: 100 °C Bake Time: 60 secs
5	Spin Resist	Resist: AZ P4210 Resist Type: Positive Spin Speed: 4000 rpm Spin Time: 30 secs
6	Bake	Bake Temperature: 100 °C Bake Time: 90 secs
7	Hacker Fab Maskless Litho Stepper	Exposure time: 8 secs
8	Develop	Developer: AZ 400K : DI Water (1:3) Develop Time: 30 secs
9	Wet-Etch	Actually performed with SF6 RIE, but can be replaced by a Nitric + HF wet etch solution since this step simply creates alignment marks in the Si.
10	Wet Strip Resist	Stripping Agent(s): Acetone then IPA Blow dry with N2 gun after.
11	RCA Clean	SC 1 Constituents: H2O:NH4OH(29%):H2O2(30%) (5:1:1) SC 1 Cleaning Time: 10 mins SC 1 Cleaning Temperature: 80 °C HF Concentration: 6:1 BOE HF Dip Time: 15 secs HF Dip Temperature: 20 °C SC 2 Constituents: H2O:HCl(37%):H2O2(30%) (6:1:1) SC 2 Cleaning Time: 10 mins SC 2 Cleaning Temperature: 80 °C
12	Spin-Coat	Material Type: Non-Resist Material: 700B (spin on glass) Spin Speed: 4000 rpm Spin Time: 20 secs
13	Bake	Bake Temperature: 400 °C Bake Time: 10 mins
14	Spin-Coat	Material Type: Adhesion Promoter Material: HMDS Spin Speed: 4000 rpm Spin Time: 30 secs
15	Bake	Bake Temperature: 100 °C Bake Time: 60 secs
16	Spin Resist	Resist: AZ P4210 Resist Type: Positive Spin Speed: 4000 rpm Spin Time: 30 secs
17	Bake	Bake Temperature: 100 °C Bake Time: 90 secs
18	Hacker Fab Maskless Litho Stepper	Exposure time: 8 secs
19	Develop	Developer: AZ 400K : DI Water (1:3) Develop Time: 30 secs
20	Wet-Etch	Etch Time: 20 secs Etching Agent(s): 6:1 BOE
21	Wet Strip Resist	Stripping Agent(s): Acetone then IPA Blow dry with N2 gun after.
22	Spin-On Dopant	Spin-On Dopant Name: P504 (Phosphorus source) Spin Speed: 4000 rpm Spin Time: 20 secs
23	Bake	Bake Temperature: 200 °C Bake Time: 10 mins
24	Dopant Diffusion	Diffusion Time: 30 mins Diffusion Temperature: 1100 °C Environmental: false
25	Wet-Etch	Etch Time: 10 mins Etching Agent(s): 6:1 BOE
26	RCA Clean	SC 1 Constituents: H2O:NH4OH(29%):H2O2(30%) (5:1:1) SC 1 Cleaning Time: 10 mins SC 1 Cleaning Temperature: 80 °C HF Concentration: 6:1 BOE HF Dip Time: 15 secs HF Dip Temperature: 20 °C SC 2 Constituents: H2O:HCl(37%):H2O2(30%) (6:1:1) SC 2 Cleaning Time: 80 mins SC 2 Cleaning Temperature: 75 °C
27	Sputter w/ CMU Hacker Fab RF Sputtering Chamber	Material: Al2O3 Film thickness: 20 nm Deposition Rate: .25 Å/s Deposition Time: 80 mins Sputter Type: RF Sputtering RF or DC Power: 100 Watts Sputter Gas Composition: 9 SCCM UHP Ar : 9 SCCM UHP O2 Chamber Pressure: 4.7E-3 Torr Throw Distance: 3" Base Pressure Pre Deposition: 1E-7 Torr Target Sputter Clean Ar Flow: 30 SCCM Target Sputter Clean Time: 15 Minutes SWR During Deposition: 1.5
28	Sputter w/ CMU Hacker Fab RF Sputtering Chamber	Material: Al Film thickness: 150 nm Deposition Rate: 2.5 Å/s Deposition Time: 60 mins Sputter Type: RF Sputtering RF or DC Power: 100 Watts Sputter Gas Composition: 15 SCCM UHP Ar Chamber Pressure: 3E-3 Torr Throw Distance: 3" Base Pressure Pre Deposition: 1E-7 Torr Target Sputter Clean Ar Flow: 30 SCCM Target Sputter Clean Time: 15 Minutes SWR During Deposition: 1.5
29	Spin Resist	Resist: AZ P4210 Resist Type: Positive Spin Speed: 4000 rpm Spin Time: 30 secs
30	Bake	Bake Temperature: 100 °C Bake Time: 90 secs
31	Hacker Fab Maskless Litho Stepper	Exposure time: 8 secs
32	Develop	Developer: AZ 400K : DI Water (1:3) Develop Time: 30 secs
33	Wet-Etch	Etch Time: 8 mins Etching Agent(s): Type A Al Etch (PAN) Etch Temperature: 40 °C
34	Wet Strip Resist	Stripping Agent(s): Acetone then IPA Blow dry with N2 gun after.
35	Spin-Coat	Material Type: Non-Resist Material: 700B (spin on glass) Spin Speed: 4000 rpm Spin Time: 20 secs
36	Bake	Bake Temperature: 400 °C Bake Time: 10 mins
37	Spin-Coat	Material Type: Adhesion Promoter Material: HMDS Spin Speed: 4000 rpm Spin Time: 30 secs
38	Bake	Bake Temperature: 100 °C Bake Time: 60 secs
39	Spin Resist	Resist: AZ P4210 Resist Type: Positive Spin Speed: 4000 rpm Spin Time: 30 secs
40	Bake	Bake Temperature: 100 °C Bake Time: 90 secs
41	Hacker Fab Maskless Litho Stepper	Exposure time: 8 secs
42	Develop	Developer: AZ 400K : DI Water (1:3) Develop Time: 30 secs
43	Wet-Etch	Etch Time: 20 secs Etching Agent(s): 6:1 BOE
44	Wet Strip Resist	Stripping Agent(s): Acetone then IPA Blow dry with N2 gun after.
45	Sputter w/ CMU Hacker Fab RF Sputtering Chamber	Material: Al Film thickness: 300 nm Deposition Rate: 2.5 Å/s Deposition Time: 120 mins Sputter Type: RF Sputtering RF or DC Power: 100 Watts Sputter Gas Composition: 15 SCCM UHP Ar Chamber Pressure: 3E-3 Torr Throw Distance: 3" Base Pressure Pre Deposition: 1E-7 Torr Target Sputter Clean Ar Flow: 30 SCCM Target Sputter Clean Time: 15 Minutes SWR During Deposition: 1.5
46	Spin Resist	Resist: AZ P4210 Resist Type: Positive Spin Speed: 4000 rpm Spin Time: 30 secs
47	Bake	Bake Temperature: 100 °C Bake Time: 90 secs
48	Hacker Fab Maskless Litho Stepper	Exposure time: 8 secs
49	Develop	Developer: AZ 400K : DI Water (1:3) Develop Time: 30 secs
50	Wet-Etch	Etch Time: 4 mins Etching Agent(s): Type A Al Etchant (PAN)
51	Wet Strip Resist	Stripping Agent(s): Acetone then IPA Blow dry with N2 gun after.

Steps 12-25 replaced by the below sequence in chip 1 for "maskless" diffusion:

Spin-On and Bake P504 Dopant (400 rpm 20s, 200C 10 mins)
Pattern on top of P504 Dopant
Wet-Etch P504 Dopant with 6:1 BOE (20s)
Dopant Diffusion (1100C 30 mins)

MOSFET masks, images, and results

1

pattern and etch alignment marks into Si

2

spin on glass (dopant mask), pattern and etch source/drain regions

3

spin on dopant, diffuse

4

etch/clean off dopant, sputter gate films, pattern and etch gates

5

spin on glass, pattern and etch contact holes

6

sputter Al, pattern and etch contact pads

All curves below recorded on lower row (50 um gate length, 21.4 um channel length)

Chip 1 electrical testing

Chip 2 pre anneal electrical testing

Chip 2 post anneal electrical testing

Chip/Processing	On Current Vd=5, Vg=0 (A)	Off Current Vd=5, Vg=0 (A)	On/Off Ratio Vd = 5
Chip 1 "maskless" doping	3.2E-3	8.8E-4	3.6
Chip 2 "masked" doping - best	4.4E-4	1.2E-6	369
Chip 2 400C annealed "masked" doping	4.9E-4	2.2E-6	227

TLM Structures (contact resistance and sheet resistance results)

Built on same chip(s) as FETs

Processing	Specific contact resistance (ohm-cm^2)	Sheet Resistance (ohm/square)
Chip 1 "maskless doping"	7.15E-4	56.32
Chip 2 "masked doping"	1.78E-3	113.25
Chip 2 "masked doping" - 400C annealed	3.75E-4	92.27

Appendix

9:9, 3hr, Standard RCA Clean

size (area)	frequency	area_mm2	k_avg_raw	k_slope_avg_raw	Vfb_PN_avg_raw	Vfb_NP_avg_raw	deltaVfb_avg_raw	k_avg_corrected	k_slope_avg_corrected	Vfb_PN_avg_corrected	Vfb_NP_avg_corrected	deltaVfb_avg_corrected	Gpeak_PN_S	Gpeak_NP_S	Rs_mean_ohm
Small (0.2 mm²)	10KHz	0.20	7.428647	5.073352	0.35	-0.90	1.25	9.863421	4.937214	0.05	-1.35	1.40	0.000012	0.000012	20992.490094
Small (0.2 mm²)	100KHz	0.20	7.114325	4.743494	-0.20	-1.15	0.95	7.186758	4.910686	-0.20	-1.10	0.90	0.000022	0.000023	565.949437
Small (0.2 mm²)	1MHz	0.20	6.768461	1.728415	-0.60	-1.40	0.80	7.379437	6.553137	-0.50	-1.30	0.80	0.000512	0.000514	165.844804
Medium (0.79 mm²)	10KHz	0.79	6.697895	5.073352	0.45	-0.60	1.05	6.800300	4.937214	0.50	-0.55	1.05	0.000009	0.000010	1349.595597
Medium (0.79 mm²)	100KHz	0.79	6.529448	4.743494	-0.10	-0.95	0.85	6.571378	4.910686	0.00	-0.85	0.85	0.000095	0.000099	124.666071
Medium (0.79 mm²)	1MHz	0.79	5.318851	1.728415	-0.45	-1.30	0.85	7.888473	6.553137	-0.40	-1.25	0.85	0.003640	0.003644	90.601948
Large (1.77 mm²)	10KHz	1.77	5.409678	5.073352	0.40	-0.25	0.65	5.535893	4.937214	0.45	-0.10	0.55	0.000023	0.000023	1002.470871
Large (1.77 mm²)	100KHz	1.77	5.092326	4.743494	-0.15	-0.60	0.45	5.241898	4.910686	0.00	-0.45	0.45	0.000241	0.000233	132.262058
Large (1.77 mm²)	1MHz	1.77	2.455902	1.728415	-0.35	-0.40	0.05	6.723377	6.553137	-0.45	-0.50	0.05	0.006887	0.006341	107.769918

9:9, 1hr, Standard RCA Clean

size (area)	frequency	area_mm2	k_avg_raw	k_slope_avg_raw	Vfb_PN_avg_raw	Vfb_NP_avg_raw	deltaVfb_avg_raw	k_avg_corrected	k_slope_avg_corrected	Vfb_PN_avg_corrected	Vfb_NP_avg_corrected	deltaVfb_avg_corrected	Gpeak_PN_S	Gpeak_NP_S	Rs_mean_ohm
Small (0.2 mm²)	10KHz	0.20	6.141816	0.904621	-0.30	-1.00	0.70	13.045352	0.173698	-0.75	-0.80	0.05	0.000052	0.000056	9025.245375
Small (0.2 mm²)	100KHz	0.20	5.301111	2.379235	-0.80	-1.20	0.40	5.513058	2.470873	-0.70	-1.00	0.30	0.000083	0.000083	495.445897
Small (0.2 mm²)	1MHz	0.20	3.828395	0.381960	-1.10	-1.55	0.45	5.758140	3.908771	-1.00	-1.35	0.35	0.002048	0.002042	166.487007
Medium (0.79 mm²)	10KHz	0.79	3.996518	0.904621	-0.25	-0.60	0.35	5.358427	0.173698	-0.40	-0.70	0.30	0.000075	0.000072	3649.048078
Medium (0.79 mm²)	100KHz	0.79	3.610729	2.379235	-0.55	-0.95	0.40	3.720343	2.470873	-0.50	-0.80	0.30	0.000190	0.000199	159.210655
Medium (0.79 mm²)	1MHz	0.79	1.724243	0.381960	-0.85	-1.25	0.40	4.774321	3.908771	-1.00	-1.30	0.30	0.006874	0.006886	95.271610
Large (1.77 mm²)	10KHz	1.77	1.616946	0.904621	-1.45	-0.60	0.85	1.759600	0.173698	-1.40	-0.60	0.80	0.000002	0.000061	1696.143692
Large (1.77 mm²)	100KHz	1.77	2.742960	2.379235	-0.35	-0.75	0.40	2.847340	2.470873	-0.35	-0.70	0.35	0.000355	0.000355	104.022923
Large (1.77 mm²)	1MHz	1.77	0.803455	0.381960	-0.40	-0.75	0.35	4.144864	3.908771	-0.55	-0.95	0.40	0.010591	0.010604	77.807216

9:9, 3 hr, HF last

size (area)	frequency	area_mm2	k_avg_raw	k_slope_avg_raw	Vfb_PN_avg_raw	Vfb_NP_avg_raw	deltaVfb_avg_raw	k_avg_corrected	k_slope_avg_corrected	Vfb_PN_avg_corrected	Vfb_NP_avg_corrected	deltaVfb_avg_corrected	Gpeak_PN_S	Gpeak_NP_S	Rs_mean_ohm
Small (0.2 mm²)	10KHz	0.20	7.685834	5.625961	-1.45	-1.90	0.45	7.766772	5.877118	-1.40	-1.85	0.45	0.000002	0.000002	3053.672852
Small (0.2 mm²)	100KHz	0.20	7.396978	4.707130	-1.90	-2.20	0.30	7.414154	4.847823	-1.85	-2.15	0.30	0.000019	0.000020	260.665467
Small (0.2 mm²)	1MHz	0.20	6.890245	2.242337	-2.25	-2.55	0.30	7.407294	4.727527	-2.20	-2.45	0.25	0.000470	0.000471	148.915132
Medium (0.79 mm²)	10KHz	0.79	7.129632	5.625961	-0.90	-1.30	0.40	7.175604	5.877118	-0.85	-1.25	0.40	0.000008	0.000009	1143.266648
Medium (0.79 mm²)	100KHz	0.79	6.360197	4.707130	-1.25	-1.60	0.35	6.415378	4.847823	-1.20	-1.55	0.35	0.000085	0.000090	147.965410
Medium (0.79 mm²)	1MHz	0.79	5.041438	2.242337	-1.55	-1.95	0.40	6.663681	4.727527	-1.50	-1.85	0.35	0.002853	0.002849	87.454312
Large (1.77 mm²)	10KHz	1.77	5.925761	5.625961	-1.75	-2.05	0.30	6.146619	5.877118	-1.60	-1.85	0.25	0.000026	0.000026	1447.212115
Large (1.77 mm²)	100KHz	1.77	5.077424	4.707130	-2.15	-2.35	0.20	5.200458	4.847823	-2.05	-2.25	0.20	0.000191	0.000195	136.210088
Large (1.77 mm²)	1MHz	1.77	2.878274	2.242337	-2.25	-2.50	0.25	5.116181	4.727527	-2.30	-2.55	0.25	0.005637	0.005627	79.692297

9:9, 80 min, HF last

size (area)	frequency	area_mm2	k_avg_raw	k_slope_avg_raw	Vfb_PN_avg_raw	Vfb_NP_avg_raw	deltaVfb_avg_raw	k_avg_corrected	k_slope_avg_corrected	Vfb_PN_avg_corrected	Vfb_NP_avg_corrected	deltaVfb_avg_corrected	Gpeak_PN_S	Gpeak_NP_S	Rs_mean_ohm
Small (0.2 mm²)	10KHz	0.20	7.226328	4.517307	-0.30	-1.45	1.15	11.470554	4.553309	-1.85	-1.70	0.15	0.000034	0.000027	3265.030912
Small (0.2 mm²)	100KHz	0.20	6.614153	3.185460	-1.05	-1.85	0.80	6.721767	3.417425	-0.95	-1.70	0.75	0.000075	0.000083	289.871676
Small (0.2 mm²)	1MHz	0.20	4.991604	0.455764	-1.55	-2.45	0.90	7.040173	5.204334	-1.35	-2.05	0.70	0.001855	0.001850	162.998687
Medium (0.79 mm²)	10KHz	0.79	6.424663	4.517307	-0.45	-1.65	1.20	6.597815	4.553309	-0.40	-1.55	1.15	0.000027	0.000027	1121.137288
Medium (0.79 mm²)	100KHz	0.79	5.074745	3.185460	-1.15	-1.90	0.75	5.259125	3.417425	-1.10	-1.75	0.65	0.000245	0.000268	163.635326
Medium (0.79 mm²)	1MHz	0.79	2.018435	0.455764	-1.50	-2.35	0.85	6.804791	5.204334	-1.50	-2.25	0.75	0.006929	0.006923	105.118284
Large (1.77 mm²)	10KHz	1.77	4.906795	4.517307	-0.90	-1.85	0.95	5.354940	4.553309	-0.85	-1.70	0.85	0.000085	0.000083	1191.643675
Large (1.77 mm²)	100KHz	1.77	3.642597	3.185460	-1.60	-2.20	0.60	3.859411	3.417425	-1.50	-2.00	0.50	0.000497	0.000502	128.614905
Large (1.77 mm²)	1MHz	1.77	0.996573	0.455764	-1.75	-2.35	0.60	5.489297	5.204334	-1.90	-2.45	0.55	0.010393	0.010387	82.599948

9:9, 80 min, HF last, 450C 30 min O2 anneal

size (area)	frequency	area_mm2	k_avg_raw	k_slope_avg_raw	Vfb_PN_avg_raw	Vfb_NP_avg_raw	deltaVfb_avg_raw	k_avg_corrected	k_slope_avg_corrected	Vfb_PN_avg_corrected	Vfb_NP_avg_corrected	deltaVfb_avg_corrected	Gpeak_PN_S	Gpeak_NP_S	Rs_mean_ohm
Small (0.2 mm²)	10KHz	0.20	5.725439	3.625706	-3.35	-4.30	0.95	10.969794	3.796601	-3.20	-4.55	1.35	0.000007	0.000026	4665.743838
Small (0.2 mm²)	100KHz	0.20	4.742700	2.765370	-4.35	-4.70	0.35	5.292607	3.124594	-4.15	-4.45	0.30	0.000081	0.000090	910.056283
Small (0.2 mm²)	1MHz	0.20	2.901555	0.793532	-4.75	-4.95	0.20	4.029582	2.940564	-4.65	-4.85	0.20	0.000823	0.000622	273.774244
Medium (0.79 mm²)	10KHz	0.79	4.972657	3.625706	-3.15	-4.30	1.15	5.803228	3.796601	-2.95	-3.70	0.75	0.000029	0.000053	2254.233872
Medium (0.79 mm²)	100KHz	0.79	3.760431	2.765370	-4.50	-4.75	0.25	4.186907	3.124594	-4.30	-4.55	0.25	0.000289	0.000286	309.539446
Medium (0.79 mm²)	1MHz	0.79	1.665962	0.793532	-4.75	-4.95	0.20	3.416144	2.940564	-4.80	-5.00	0.20	0.002619	0.001648	137.554599
Large (1.77 mm²)	10KHz	1.77	3.918623	3.625706	-3.10	-4.35	1.25	4.620144	3.796601	-3.05	-3.90	0.85	0.000062	0.000073	1385.010681
Large (1.77 mm²)	100KHz	1.77	3.022550	2.765370	-4.30	-4.65	0.35	3.404616	3.124594	-4.10	-4.50	0.40	0.000523	0.000518	210.306410
Large (1.77 mm²)	1MHz	1.77	1.054850	0.793532	-4.35	-4.65	0.30	3.077261	2.940564	-4.65	-4.90	0.25	0.005672	0.003891	97.212422