CMOS Source/Drain Metal Contact Optimization

Goals

Develop metal contact formation process (pre, during, and post deposition development) to reduce the contact resistance and Schottky behavior of of metal contacts on Source/Drain regions of PMOS and NMOS devices. Metal type in metal - Si contact is part of optimization.

Metrics

Metric	Measured Value
Specific contact resistance	1E-5 ohm/cm^2
Schottky barrier height	.7 eV

Working folder in google drive: https://drive.google.com/drive/folders/1qafBxH8luKwNSnPRmJxCRI_14apNio72