# CMOS Source/Drain Metal Contact Optimization ## Goals Develop metal contact formation process (pre, during, and post deposition development) to reduce the contact resistance and Schottky behavior of of metal contacts on Source/Drain regions of PMOS and NMOS devices. Metal type in metal - Si contact is part of optimization. ### Metrics | Metric | Measured Value | | --------------------------- | -------------- | | Specific contact resistance | 1E-5 ohm/cm^2 | | Schottky barrier height | .7 eV | Working folder in google drive: --- # Agent Instructions: Querying This Documentation If you need additional information that is not directly available in this page, you can query the documentation dynamically by asking a question. Perform an HTTP GET request on the current page URL with the `ask` query parameter: ``` GET https://docs.hackerfab.org/home/working-docs/cmos-source-drain-metal-contact-optimization.md?ask= ``` The question should be specific, self-contained, and written in natural language. The response will contain a direct answer to the question and relevant excerpts and sources from the documentation. Use this mechanism when the answer is not explicitly present in the current page, you need clarification or additional context, or you want to retrieve related documentation sections.