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| Step # | Step Name | Parameters | Comments | Layer Stacks |
| --------------- | ---------------------------- | ------------------------------------------------------------------------------------------------------------------------------------------------ | -------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------- | ------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------- |
| | | | | |
| Unnamed Section | | | | |
| 0 | Substrate Stack | PolySi: 500 nm
SiO2: 20 nm
Si (lightly p doped): 525 µm
| |  |
| 1 | Acetone + IPA Clean (N2 dry) | Cleaning Agent: Acetone then IPA
Ultra-Sonication: false
| Squirt with Acetone, then IPA, then dry the surface with the N2 gun. |  |
| 2 | Spin-On Dopant | Spin-On Dopant Name: P504
Dopant Type: N
Spin Speed: 4000 rpm
Spin Time: 20 secs
| P504 from Filmtronics
must use filtered syringe tips
|  |
| 3 | Dopant Diffusion | Diffusion Time: 15 mins
Diffusion Temperature: 1100 °C
Environmental: false
| In tube furnace with fused quartz tube |  |
| 4 | Wet-Etch | Etch Time: 10 mins
Etching Agent(s): 6:1 BOE
Etch Temperature: 25 °C
| BOE is HF + Ammonium Fluoride
DI water rinse after etch
|  |
| 5 | Acetone + IPA Clean (N2 dry) | Cleaning Agent: Acetone then IPA
Ultra-Sonication: false
| Squirt with Acetone, then IPA, then dry the surface with the N2 gun. |  |
| 6 | HMDS Vapor Prime | Deposited Monolayer: HMDS
Layer Thickness: 5 Å
| Not Using an actual vapor primer.
Spin @ 3000 rpm for 20 s
bake at 100C for 20 s
|  |
| 7 | Spin Resist | Resist: AZ P4210
Resist Type: Positive
Spin Speed: 4000 rpm
Spin Time: 30 secs
| |  |
| 8 | Bake | Bake Temperature: 100 °C
Bake Time: 90 secs
| |  |
| 9 | Stepper Lithography | | Pattern 1 -Defining Gates |  |
| 10 | Develop | Developer: AZ 400K 3:1 (DI water : developer)
Develop Time: 30 secs
Develop Temperature: 25 °C
| Develop time may vary, use current stable patterning process. Modulate exposure time and develop time as needed to achieve good pattern resolution |  |
| 11 | ICP-RIE | Etch Time: 90 secs
Etch Gas Composition: SF6
Gas Flows and Ratios: 10 sccm
RF Power or Voltage: 100 Watts
Sidewall Angle: 0 °
| |  |
| 12 | Wet Strip Resist | Stripping Agent(s): Acetone then IPA | Squirt with acetone, then IPA, then dry with N2 gun |  |
| 13 | Plasma Descum | Gas composition: O2 10 SCCM
RF Power: 100 Watts
Time: 2400 secs
| Alternatively, a shorter clean can be done before resist strip. |  |
| 14 | Wet-Etch | Etch Depth: 20 nm
Etch Time: 20 secs
Etch Rate: 80 nm/s
Etching Agent(s): 6:1 BOE (HF)
| BOE is HF + Ammonium Fluoride
DI water rinse after etch
|  |
| 15 | Spin-On Dopant | Spin-On Dopant Name: P504
Dopant Type: N+
Spin Speed: 4000 rpm
Spin Time: 20 secs
| P504 from Filmtronics
must use filtered syringe tips
|  |
| 16 | Bake | Bake Temperature: 200 °C
Bake Time: 10 mins
| |  |
| 17 | HMDS Vapor Prime | Deposited Monolayer: HMDS
Layer Thickness: 5 Å
| Not Using an actual vapor primer.
Spin @ 3000 rpm for 20 s
bake at 100C for 20 s
|  |
| 18 | Spin Resist | Resist: AZ P4210
Resist Type: Positive
Spin Speed: 4000 rpm
Spin Time: 30 secs
| |  |
| 19 | Bake | Bake Temperature: 100 °C
Bake Time: 90 secs
| |  |
| 20 | Stepper Lithography | Exposure time: 8 secs | Pattern 2 N well (source/drain) region defining pattern. Note, this may overlap with the gate area and further effect PolySi dopant concentration. |  |
| 21 | Develop | Developer: AZ 400K 3:1 (DI water : developer)
Develop Time: 60 secs
Develop Temperature: 25 °C
| Develop time may vary, use current stable patterning process. Modulate exposure time and develop time as needed to achieve good pattern resolution. |  |
| 22 | Wet-Etch | Etch Time: 10 secs
Etching Agent(s): BOE 6:1 (HF)
| |  |
| 23 | Wet Strip Resist | Stripping Agent(s): Acetone then IPA | Squirt with acetone, then IPA, then dry with N2 gun |  |
| 24 | Dopant Diffusion | Diffusion Time: 30 mins
Diffusion Temperature: 1100 °C
Environmental: false
| |  |
| 25 | Wet-Etch | Etch Time: 10 mins
Etching Agent(s): 6:1 BOE (HF)
| |  |
| 26 | Spin-Coat | Material: 700B
Spin Speed: 4000 rpm
Spin Time: 20 secs
| 700B from filmtronics |  |
| 27 | Bake | Bake Temperature: 200 °C
Bake Time: 10 mins
| |  |
| 28 | Acetone + IPA Clean (N2 dry) | Cleaning Agent: Acetone then IPA
Ultra-Sonication: false
| Squirt with Acetone, then IPA, then dry the surface with the N2 gun. |  |
| 29 | HMDS Vapor Prime | Deposited Monolayer: HMDS
Layer Thickness: 5 Å
| Not Using an actual vapor primer.
Spin @ 3000 rpm for 20 s
bake at 100C for 20 s
|  |
| 30 | Spin Resist | Resist: AZ P4210
Resist Type: Positive
Spin Speed: 4000 rpm
Spin Time: 30 secs
| |  |
| 31 | Bake | Bake Temperature: 100 °C
Bake Time: 90 secs
| |  |
| 32 | Stepper Lithography | Exposure time: 8 secs | Pattern 3 - Defining Al contact areas |  |
| 33 | Develop | Developer: AZ 400K 3:1 (DI water : developer)
Develop Time: 60 secs
Develop Temperature: 25 °C
| Develop time may vary, use current stable patterning process. Modulate exposure time and develop time as needed to achieve good pattern resolution. |  |
| 34 | Wet-Etch | Etch Time: 20 secs
Etching Agent(s): 6:1 BOE (HF)
| |  |
| 35 | Wet Strip Resist | Stripping Agent(s): Acetone then IPA | Squirt with acetone, then IPA, then dry with N2 gun |  |
| 36 | Thermal Evaporation | Film thickness: 500 nm | Alternatively sputtering can be used depending on available lab tooling. |  |
| 37 | Acetone + IPA Clean (N2 dry) | Cleaning Agent: Acetone then IPA
Ultra-Sonication: false
| Squirt with Acetone, then IPA, then dry the surface with the N2 gun. |  |
| 38 | Spin Resist | Resist: AZ P4210
Resist Type: Positive
Spin Speed: 4000 rpm
Spin Time: 30 secs
| |  |
| 39 | Bake | Bake Temperature: 100 °C
Bake Time: 90 secs
| |  |
| 40 | Stepper Lithography | | Pattern 4 - Interconnect and contact pad definition |  |
| 41 | Develop | Developer: AZ 400K 3:1 (DI water : developer)
Develop Time: 60 secs
Develop Temperature: 25 °C
| Develop time may vary, use current stable patterning process. Modulate exposure time and develop time as needed to achieve good pattern resolution. |  |
| 42 | Wet-Etch | Etch Time: 5 mins
Etching Agent(s): Type A Al Etchant
Etch Temperature: 40 °C
New Field 1: stir speed 150 rpm
| Heat Etch up for 5-10 minutes before begining. Di water rinse after etch.
Etch rate to be around 90nm/minute with Type A Al etchant for the Evaporatied Al, and based off the evaporator QCM readings.
|  |
| 43 | Wet Strip Resist | Stripping Agent(s): Acetone then IPA | Squirt with acetone, then IPA, then dry with N2 gun |  |
