CMOS Doping Process Development

Dope the channel, and source/drain regions for CMOS chips, via solid source surface diffusion, starting with 5-10 ohm p-type substrate.

Metrics

CMOS Region	Doping level	Doping Profile Details
NMOS Source/Drain	1E19 - 1E20 /cm^3 (Boron)	Uniform over 2 nm Junction depth shallower than channel
NMOS Channel	1E14 - 1E15 /cm^3 (Boron)	Will be uniform by default (p type wafers)
PMOS Source/Drain	1E20 - 1E21 /cm^3 (Boron) with 1E15 - 1E16 /cm^3 (Phosphorous) background	Uniform over 2 nm Junction depth shallower than channel
PMOS Channel	1E15 - 1E16 /cm^3 (Phosphorous) with 1E14 - 1E15 /cm^3 (Boron) background	Uniform over 10 nm Junction depth deeper than source/drain

Working Folder in Google Drive: https://drive.google.com/drive/folders/1bnJyeBcbssFuE7fQBo4J-6Roz3mHzRwJ